ALD Application

Dynamic Random Access Memory

ALD-APP-01
ALD-APP-10
A
  • Cap. dielectric:
    CVD : TaO, BST
    ALD : Al2O3, HfO2, Al2O3 / HfO2
  • Electrode :
    ALD : TiN
    CVD : Ru, HSG, PH3/N
  • Barrier : ALD TiN
  • Capping layer : ALD Al2O3
B
  • Gate electrode : Si – Ge
  • Gate dielectric : Al2O3, HfO2  
  • Nitridation gate
C
  • Contact barrier : ALD TiN
  • S/D : SEG with in-situ clean
  • STI : HDP

Solar Cell

ALD Al2O3 for surface passivation of c-Si solar cells

Bram Hoex, Stephan Heil, Erik Langereis, Richard van de Sanden & Erwin Kessels
Dept. of Applied Physics, Eindhoven University of Technology, The Netherlands
Internet : www.etp.phys.tue.nl

ALD-APP-04

Atomic Force Microscopy(AFM)
Objects of almost any size and shape can be coated. Example: AFM tips

ALD-APP-03

Fig. 1. SEM images of the AFM tips when coated by 30-nm- (left) and 470-nm- (right) thick layers of ALE SnO2

M. Utriainen et al. Appl. Phys. A 68 (1999) 339.

Micro Electro Mechanical System

ALD-APP-05

ALD on MEMS Devices
Deposit Ultrathin and Conformal Films on MEMS Devices for:

  • Lubrication
  • Corrosion Protection
  • Higher Hardness
  • Tune Mechanical Properties
  • Optical Coatings
  • Charge Dissipation
  • Hydrophobic Surface

* T.M.Mayer, et al., Appl. Phys. Lett.
82 (2003) 2883.

Carbon Nanotube
SAMSUNG-5″ Color display Carbon Nanotube FED

ALD-APP-06

R.H. Baughman, Science 2002, 297, 787

ALD-APP-06-2

R.H. Baughman, Science 2002, 297, 787.

C, Dekker, Science 2001, 294, 1317.

C, Dekker, Science 2001, 294, 1317.

ALD-APP-07

Barrier Film
Introduction: moisture permeation barriers
Encapsulation of polymeric devices to prevent lifetime degradation by water uptake

ALD-APP-082

Demands on barrier properties
Current status : PVC and (Plasma-Enhanced) CVD barriers

  • Single layer barriers(>100nm) → WVTR >10-2 g·m-2 · day -1
  • Multilayer barrier stack(3-5 μm) → WVTR >10-5 g·m-2 · day-1

P.E. Burrows et al.. Displays 22. 65 (2001)

Gas Sensor & Etc.
Metal Oxide Semiconductor Gas Sensors
Gas Adsorption on Semiconductor Changes Its Conductivity
Mechanism Involves Changing Carrier Density in space-Charge Region

ALD-APP-09
ALD-APP-09-1

Yasuhiro Shimizu and Coworkers :
Sensors and Actuators B 52 (1998) 38~44