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Showerhead type Plasma-Enhanced ALD (PE-ALD)

  • Plasma process & treatment
  • Adjustable the gap between showerhead and substrate
  • Variable gas delivery system : Bubbler, Vaporizer, LDS
  • Completely separated source delivery
  • Configuration ALD/CVD mode process
  • Good film uniformity & quality
  • Process temperature : up to 500°C
  • Precursor canister : 4EA(standard)
  • Substrate Size : 4 ~ 12” wafer
  • Applications
    Dielectric thin films : Al2O3, HfO2, ZrO2, TiO2, ZnO2, ZnS, GST, Laminate films, etc.
    Nitride films : AlN, TiN, TiAlN, TaN, etc.
    Metal films : Ru, Co, Ti, Ni, etc.