• Technology

Application of ALD

  • Application of ALD
  • Application Window of ALD

Dynamic Random Access Memory

  • A
  • Cap. dielectric:
  • CVD : TaO, BST
  • ALD : Al2O3, HfO2, Al2O3 / HfO2
  • Electrode :
  • ALD : TiN
  • CVD : Ru, HSG, PH3/N
  • Barrier : ALD TiN
  • Capping layer : ALD Al2O3
  • B
  • Gate electrode : Si – Ge
  • Gate dielectric : Al2O3, HfO2
  • Nitridation gate
  • C
  • Contact barrier : ALD TiN
  • S/D : SEG with in-situ clean
  • STI : HDP

Solar Cell

  • ALD Al2O3 for surface passivation of c-Si solar cells
  • Bram Hoex, Stephan Heil, Erik Langereis, Richard van de Sanden & Erwin Kessels
    Dept. of Applied Physics, Eindhoven University of Technology, The Netherlands
  • Internet : https://www.tue.nl/en/

Atomic Force Microscopy(AFM)

Objects of almost any size and shape can be coated. Example: AFM tips

Fig. 1. SEM images of the AFM tips when coated by 30-nm- (left) and 470-nm- (right) thick layers of ALE SnO2M. Utriainen et al. Appl. Phys. A 68 (1999) 339.

Atomic Force Microscopy(AFM)

ALD on MEMS Devices

Deposit Ultrathin and Conformal Films on MEMS Devices for:

  • Lubrication
  • Corrosion Protection
  • Higher Hardness
  • Tune Mechanical Properties
  • Optical Coatings
  • Charge Dissipation
  • Hydrophobic Surface

* T.M.Mayer, et al., Appl. Phys. Lett. 82 (2003) 2883.

Carbon Nanotube

SAMSUNG-5″ Color display Carbon Nanotube FED

  • R.H. Baughman,
  • Science 2002, 297, 787
  • R.H. Baughman,
  • Science 2002, 297, 787.
  • C, Dekker,
  • Science 2001, 294, 1317.

Optical fiber

Standard Single-mode fiber

Barrier Film

Introduction: moisture permeation barriers
Encapsulation of polymeric devices to prevent lifetime degradation by water uptake

Demands on barrier properties

  • Current status : PVC and (Plasma-Enhanced) CVD barriers
  • Single layer barriers(>100nm) → WVTR >10-2 g·m-2 · day-1
  • Multilayer barrier stack(3-5 μm) → WVTR >10-5 g·m-2 · day-1

Gas Sensor & Etc.

Metal Oxide Semiconductor Gas Sensors

Gas Adsorption on Semiconductor Changes Its Conductivity
Mechanism Involves Changing Carrier Density in space-Charge Region

  • Yasuhiro Shimizu and Coworkers :
  • Sensors and Actuators B 52 (1998) 38~44